jiangsu changjiang electronics technology co., ltd to-92l plastic-encapsulate transistors KTA1024 transistor (pnp) features z high voltage : v ceo =-150v. z low output capacitance : cob=5.0pf(max.). z high transition frequency : f t =120mhz (typ.). z complementary to ktc3206. maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage -150 v v ceo collector-emitter voltage -150 v v ebo emitter-base voltage -5 v i c collector current -continuous -50 ma p c collector power dissipation 1 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp m ax u nit collector-base breakdown voltage v (br)cbo i c =-10 a,i e =0 -150 v collector-emitter breakdown voltage v (br)ceo i c =-1ma,i b =0 -150 v emitter-base breakdown voltage v (br)ebo i e =-10 a,i c =0 -5 v collector cut-off current i cbo v cb =-150v,i e =0 -0.1 a emitter cut-off current i ebo v eb =-5v,i c =0 -0.1 a dc current gain h fe v ce =-5v,i c =-10ma 70 240 collector-emitter saturation voltage v ce(sat) i c =-10ma,i b =-1ma -0.8 v base -emitter voltage v be v ce =-5v,i c =-30ma -0.9 v transition frequency f t v ce =-30v,i c =-10ma 120 mhz collector output capacitance c ob v cb =-10v,i e =0,f=1mhz 4.0 5.0 pf classification of h fe rank o y range 70-140 120-240 to-92l 1. emitter 2. collector 3. base j c ( t www.cj-elec.com 1 a,jun,2014 www.cj-elec.com c,mar,2016 a,jun,2011
symbol dimensions in millimeters dimensions in inches min. max. min. max. a 3.750 4.050 0.148 0.159 a1 1.280 1.580 0.050 0.062 b 0.380 0.550 0.015 0.022 b1 0.620 0.780 0.024 0.031 c 0.350 0.450 0.014 0.018 d 4.750 5.050 0.187 0.199 d1 4.000 0.157 e 7.850 8.150 0.309 0.321 e 1.270 typ. 0.050 typ. e1 2.440 2.640 0.096 0.104 l 13.800 14.200 0.543 0.559 - 1.600 0.063 0.000 0.300 0.000 0.012 h www.cj-elec.com 2 c,mar,2016
www.cj-elec.com 3 c,mar,2016
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